Investigation on impact of AlxGa1-xN and InGaN back barriers and source-drain spacing on the DC/RF performance of Fe-doped recessed T-gated AlN/GaN HEMT on SiC wafer for future RF power applications-Reference-Cited by-同舟云学术

Investigation on impact of AlxGa1-xN and InGaN back barriers and source-drain spacing on the DC/RF performance of Fe-doped recessed T-gated AlN/GaN HEMT on SiC wafer for future RF power applications

Published:2023-03 Issue: Volume:175 Page:207504
ISSN:2773-0123
Container-title:Micro and Nanostructures
language:en
Short-container-title:Micro and Nanostructures

Author:

Mounika B.,Ajayan J.,Bhattacharya Sandip

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Biomaterials

Reference43 articles.

1. Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: a critical review;Mounika;Micro Nanostruct.,2022

2. Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: a critical review;Ajayan;Mater. Sci. Semicond. Process.,2022

3. A critical review of AlGaN/GaN-heterostructure based Schottky diode/HEMT hydrogen (H2) sensors for aerospace and industrial applications;Ajayan;Measurement,2021

4. Electric field mapping of wide-bandgap semiconductor devices at a submicrometre resolution;Cao;Nat. Electron.,2021

5. Low limit of detection of the AlGaN/GaN-based sensor by the Kelvin connection detection technique;Zhang;Microsyst. Nanoeng.,2021

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1. Effect of lateral inhomogeneous AlGaN barrier layer on electronic properties of GaN HEMTs;Micro and Nanostructures;2024-07

2. Improvement of single event transients effect for a novel AlGaN/GaN HEMT with enhanced breakdown voltage;Journal of Science: Advanced Materials and Devices;2024-06

3. Investigation of different buffer layer impact on AlN/GaN/AlGaN HEMT using silicon carbide substrate for high-speed RF applications;Micro and Nanostructures;2024-05

4. On the double channel engineering of dual gate AlGaN/GaN HEMTs for heavy ion sensing applications;Micro and Nanostructures;2023-10

5. Impact of barrier layer thickness on DC and RF performance of AlGaN/GaN high electron mobility transistors;Applied Physics A;2023-07-19