On the double channel engineering of dual gate AlGaN/GaN HEMTs for heavy ion sensing applications-Reference-Cited by-同舟云学术

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On the double channel engineering of dual gate AlGaN/GaN HEMTs for heavy ion sensing applications

Published:2023-10 Issue: Volume:182 Page:207653
ISSN:2773-0123
Container-title:Micro and Nanostructures
language:en
Short-container-title:Micro and Nanostructures

Author:

Das Shreyasi,Kumari Vandana,Sehra Khushwant,Gupta Mridula,Saxena Manoj

Funder

Department of Science and Technology

Defence Research and Development Organisation

University of Delhi

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Biomaterials

Reference49 articles.

1. “AlGaN/GaN high electron mobility transistor for various sensing applications;Bhat;A review” Micro and Nanostructures,2023

2. A review of gallium nitride power device and its applications in motor drive;Ding;CES Transactions on Electrical Machines and Systems,2019

3. Jobymol Jacob, “Field plated, gate work function engineered AlGaN channel HEMTs with improved DC, RF and power performance”;Sreelekshmi;Micro and Nanostructures,2022

4. “Gate leakage current assessment of AlGaN/GaN HEMT with AlN cap layer”;Das,2021

5. Investigation on impact of AlxGa1-xN and InGaN back barriers and source-drain spacing on the DC/RF performance of Fe-doped recessed T-gated AlN/GaN HEMT on SiC wafer for future RF power applications;Mounika;Micro and Nanostructures,2023

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