登录 注册 会员服务 联系我们

On the double channel engineering of dual gate AlGaN/GaN HEMTs for heavy ion sensing applications

  • Published:2023-10 Issue: Volume:182 Page:207653
  • ISSN:2773-0123
  • Container-title:Micro and Nanostructures
  • language:en
  • Short-container-title:Micro and Nanostructures

Author:

Das Shreyasi,Kumari Vandana,Sehra Khushwant,Gupta Mridula,Saxena Manoj

Funder

Department of Science and Technology

Defence Research and Development Organisation

University of Delhi

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Biomaterials

Reference49 articles.

1. “AlGaN/GaN high electron mobility transistor for various sensing applications;Bhat;A review” Micro and Nanostructures,2023

2. A review of gallium nitride power device and its applications in motor drive;Ding;CES Transactions on Electrical Machines and Systems,2019

3. Jobymol Jacob, “Field plated, gate work function engineered AlGaN channel HEMTs with improved DC, RF and power performance”;Sreelekshmi;Micro and Nanostructures,2022

4. “Gate leakage current assessment of AlGaN/GaN HEMT with AlN cap layer”;Das,2021

5. Investigation on impact of AlxGa1-xN and InGaN back barriers and source-drain spacing on the DC/RF performance of Fe-doped recessed T-gated AlN/GaN HEMT on SiC wafer for future RF power applications;Mounika;Micro and Nanostructures,2023

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3