Analysis of Temperature Effect in Quadruple Gate Nano-scale FinFET
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-020-00615-x.pdf
Reference41 articles.
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3. Poiroux T, Vinet M, Faynot O, Widiez J, Lolivier J, Ernst T, Previtali B, Deleonibus S (2005) Multiple gate devices: advantages and challenges. Microelectronic Engineering 80:378–385. https://doi.org/10.1016/j.mee.2005.04.095. 14th Biennial Conference on Insulating Films on Semiconductors
4. Colinge J-P, et al. (2008) FinFETs and other multi-gate transistors, vol 73. Springer, Berlin
5. Colinge J (2007) From gate-all-around to nanowire mosfets. In: 2007 international semiconductor conference. https://doi.org/10.1109/SMICND.2007.4519637, vol 1, pp 11–17
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