From Gate-all-Around to Nanowire MOSFETs
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/4498400/4519624/04519637.pdf?arnumber=4519637
Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Performance improvement of junctionless SOI-MOSFETs by a superior depletion technique;Physica Scripta;2023-10-13
2. Off‐State Current Improvement of Double‐Gate Junctionless Field‐Effect Transistor by Modifying Central Potential;physica status solidi (a);2023-03-08
3. Physical analysis of β-Ga2O3 gate-all-around nanowire junctionless transistors: short-channel effects and temperature dependence;Journal of Computational Electronics;2022-01-28
4. A Godunov-Type Stabilization Scheme for Large-Signal Simulations of a THz Nanowire Transistor Based on the Boltzmann Equation;IEEE Transactions on Electron Devices;2021-11
5. Gate-All-Around GaN Nanowire FET as a Potential Transistor at 5 nm Technology for Low-Power Low-Voltage Applications;Nano;2021-07
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