Impact of Mole Fractions due to Work Function Variability (WFV) of Metal Gate on Electrical Parameters in Strained SOI-FinFET-Reference-Cited by-同舟云学术

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Impact of Mole Fractions due to Work Function Variability (WFV) of Metal Gate on Electrical Parameters in Strained SOI-FinFET

Published:2019-04-26 Issue:3 Volume:12 Page:577-583
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Saha Rajesh,Bhowmick Brinda,Baishya Srimanta

Funder

Council of Scientific and Industrial Research

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s12633-019-00163-z.pdf

Reference28 articles.

1. Frank DJ, Dennard RH, Nowak E, Solomon PM, Taur Y, Wong HSP (2001) Device scaling limits of Si MOSFETs and their application dependencies. Proc IEEE 89(3):259–287. https://doi.org/10.1109/5.915374

2. Bhattacharya D, Jha NK, (2014) “FinFETs: from devices to architectures,” Hindawi Publishing Corporation, Advances in Electronics Article ID 365689, 21 pages, https://doi.org/10.1155/2014/365689

3. Narendar V, Rai S, Tiwari S (2016) A two-dimensional (2D) analytical surface potential and subthreshold current model for the underlap dual-material double-gate (DMDG) FinFET. J Comput Electron 15:1316–1325

4. Li C, Zhuang Y, Zhang L (2012) Simulation study on FinFET with tri-material gate, 2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC), Bangkok, pp. 1–3. https://doi.org/10.1109/EDSSC.2012.6482802

5. Yeh M-S, Wu Y-C, Hung M-F, Liu K-C, Jhan Y-R, Chen L-C, Chang C-Y (2013) Fabrication, characterization and simulation of Ω-gate twin poly-Si FinFET nonvolatile memory. Nanoscale Res Lett 8(1):331

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