Simulation study on FinFET with tri-material gate-Reference-Cited by-同舟云学术

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Simulation study on FinFET with tri-material gate

Published:2012-12 Issue: Volume: Page:
ISSN:
Container-title:2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC)
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Author:

Li Cong,Zhuang Yiqi,Li Zhang

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6475438/6482757/06482802.pdf?arnumber=6482802

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. RF/Analog Parameters in DMG-FinFET for Channel Material Beyond Si;2022 2nd International Conference on Artificial Intelligence and Signal Processing (AISP);2022-02-12

2. Novel Attributes and Analog Performance Analysis of Dual Material Gate FINFET Based High Sensitive Biosensors;Silicon;2022-02-07

3. Recent Trends in Novel Semiconductor Devices;Silicon;2022-01-28

4. Analysis on DC and RF/Analog Performance in Multifin-FinFET for Wide Variation in Work Function of Metal Gate;Silicon;2020-02-06

5. Impact of stress effect on triple material gate step-FinFET with DC and AC analysis;Microsystem Technologies;2019-12-20

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