Analysis on DC and RF/Analog Performance in Multifin-FinFET for Wide Variation in Work Function of Metal Gate
Author:
Funder
Science and Engineering Research Board
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-020-00408-2.pdf
Reference25 articles.
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3. Bhattacharya D, Jha NK (2014) FinFETs: from devices to architectures. Adv Electron 2014:1–21
4. Mehrad M, Orouji AA (2010) Partially cylindrical fin field-effect transistor: a novel device for nanoscale applications. IEEE Trans Device Mater Reliab 10(2):271–275
5. Narendar V, Mishra RA (2015) Analytical modeling and simulation of multigate FinFET devices and the impact of high-k dielectrics on short channel effects (SCEs). Superlattice Microst 85:357–369. https://doi.org/10.1016/j.spmi.2015.06.004
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