Benefitting from High-κ Spacer Engineering in Balistic Triple-Gate Junctionless FinFET- a Full Quantum Study
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-019-00318-y.pdf
Reference29 articles.
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4. Yu B et al (2002) FinFET scaling to 10 nm gate length. In: IEEE conference publication, pp 251–254. https://doi.org/10.1109/IEDM.2002.1175825
5. Molaei R, Saremi M, Vandenberghe W (2017) A novel PNPN-like Z-shaped tunnel field- effect transistor with improved ambipolar behavior and RF performance. IEEE Trans Electron Devices 64(11). https://doi.org/10.1109/TED.2017.2755507
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