Temperature Influence on Dielectric Tunnel FET Characterization and Subthreshold Characterization
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-01776-7.pdf
Reference35 articles.
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2. Goswami B, Sengupta SJ, Reja W, Das P, Sarkar SK (2021) Validation of input/output characteristics of symmetrical double source TFET device. 2021 Devices for Integrated Circuit (DevIC), pp 256–259. https://doi.org/10.1109/DevIC50843.2021.9455764
3. Li J, Xie Q, Huang A, Wang Z (2020) Effects of drain doping profile and gate structure on ambipolar current of TFET. 2020 IEEE 3rd International Conference on Electronics Technology (ICET), pp 20–24. https://doi.org/10.1109/ICET49382.2020.9119655
4. Navya Shree G, Priyadarshini U, Keerthana M, Vimala P (2020) Design of gate engineered heterojunction surrounding gate tunnel field effect transistor (HSG TFET). 2020 International Conference on Emerging Trends in Information Technology and Engineering (ic-ETITE), pp 1–5. https://doi.org/10.1109/ic-ETITE47903.2020.230
5. Tripathy MR, Singh AK, Samad A et al (2020) Device and circuit- level assessment of GaSb/Si heterojunction vertical tunnel-FET for low-power applications. IEEE Trans Electron Devices 67:1285–1292
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