A Low Power Single Gate L-shaped TFET for High Frequency Application
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9417810/9417812/09418075.pdf?arnumber=9418075
Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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4. Impact of Noise and Interface Trap Charge on a Heterojunction Dual-Gate Vertical TFET Device;Journal of Electronic Materials;2024-02-07
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