Investigation of Temperature Impacts on I-V Characteristics to Analog/RF of Drain Underlap Based L-Shaped TFET-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Investigation of Temperature Impacts on I-V Characteristics to Analog/RF of Drain Underlap Based L-Shaped TFET

Published:2024-07-08 Issue: Volume:11 Page:347-351
ISSN:
Container-title:2024 IEEE 24th International Conference on Nanotechnology (NANO)
language:
Short-container-title:

Author:

Singh Prabhat¹,Raman Ashish¹,Kumar Naveen²,Dixit Ankit¹,Kumar Prateek¹,Yadav Dharmendra Singh³

Affiliation:

1. NIT Jaladhar,Department of Electronics & Communication Engineering,Punjab,India

2. University of Glasgow,Department of Electronics and Nanoscale Engineering,Glasgow,United Kingdom,G128QQ

3. NIT Kurukshetra,Department of Electronics & Communication Engineering,Haryana,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10628446/10628545/10628753.pdf?arnumber=10628753

Reference27 articles.

1. Limitation of CMOS supply-voltage scaling by MOSFET threshold-voltage variation

2. Review of tunnel field-effect transistor (TFET);Turkane;Int. J. Appl. Eng. Res.,2016

3. Tunnel Field-Effect Transistors: Prospects and Challenges

4. Doping and Dopingless Tunnel Field Effect Transistor

5. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP