Author:
Elshamy Abdelrahman,Shaker Ahmed,Elogail Yasmine,Salem Marwa S.,El Sabbagh Mona
Reference36 articles.
1. S. Chatterjee, A. Chattopadhyay, G. Taki, Characteristics study of high-K gate stack for MOS-FETs using TCAD Simulation, in: Proceedings of the 2018 2nd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech), 2018: IEEE, pp. 1–6.
2. S.A. Sahu, S.K. Mohapatra, R. Goswami, Comparative analysis of double gate TFET and hetero dielectric double gate TFET, in: Proceedings of the 2018 International Conference on Applied Electromagnetics, Signal Processing and Communication (AESPC), 22–24 Oct. 2018 2018, 1, pp. 1–4, doi: 10.1109/AESPC44649.2018.9033293.
3. Tunnel field effect transistor device structures: a comprehensive review;Kumawat;Mater. Today.: Proc.,2023
4. Source-all-around tunnel field-effect transistor (SAA-TFET): proposal and design;Shaker;Semicond. Sci. Technol.,2020
5. Double-gate tunnel FET with high-$\kappa $ gate dielectric;Boucart;IEEE Trans. Electron Devices,2007
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