Effects of Drain Doping Profile and Gate Structure on Ambipolar Current of TFET-Reference-Cited by-同舟云学术

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Effects of Drain Doping Profile and Gate Structure on Ambipolar Current of TFET

Published:2020-05 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE 3rd International Conference on Electronics Technology (ICET)
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Author:

Li Jie,Xie Qian,Huang Anpeng,Wang Zheng

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9116588/9119493/09119655.pdf?arnumber=9119655

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analog and linearity performance analysis of ferroelectric vertical tunnel field effect transistor with and without source pocket;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-07

2. Drain Source-Engineered Double-Gate Tunnel FET for Improved Performance;Journal of Electronic Materials;2024-05-07

3. An iTFET with Control Gate for Low Power Applications in RF and Digital Circuits;2023 IEEE 15th International Conference on ASIC (ASICON);2023-10-24

4. A new line tunneling SiGe/Si iTFET with control gate for leakage suppression and subthreshold swing improvement;Discover Nano;2023-07-28

5. A High Schottky Barrier iTFET with Control Gate for Low Power Application;2023-05-31

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