Effect of plasma oxidation on tin-oxide active layer for thin-film transistor applications
Author:
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Link
http://link.springer.com/content/pdf/10.1007/s10853-020-05708-x.pdf
Reference24 articles.
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3. Lu KK, Yao RH, Wang YP, Ning HL, Guo D, Liu XZ, Tao RQ, Xu M, Wang L, Peng JB (2019) Effects of praseodymium doping on the electrical properties and aging effect of InZnO thin-film transistor. J Mater Sci 54:14778–14786. https://doi.org/10.1007/s10853-019-03941-7
4. Zheng ZW, Cheng CH, Chen YC (2013) Low operation voltage InGaZnO thin film transistors with LaAlO3 gate dielectric incorporation. ECS J Solid State Sci Technol 2:N179–N181. https://doi.org/10.1149/2.020309jss
5. Lee Y, Lee CH, Nam T, Lee S, Oh I, Yang JY, Choi DW, Yoo C, Kim HJ, Kim WH, Kim H (2019) Hydrogen barrier performance of sputtered La2O3 films for InGaZnO thin-film transistor. J Mater Sci 54:11145–11156. https://doi.org/10.1007/s10853-019-03685-4
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