Low Operation Voltage InGaZnO Thin Film Transistors with LaAlO3Gate Dielectric Incorporation
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference34 articles.
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1. High Field-Effect Mobility Two-Channel InGaZnO Thin-Film Transistors for Low-Voltage Operation;IEEE Transactions on Electron Devices;2021-12
2. Effect of plasma oxidation on tin-oxide active layer for thin-film transistor applications;Journal of Materials Science;2021-01-03
3. High‐Performance Back‐Channel‐Etched Thin‐Film Transistors with an InGaO/InZnO Stacked Channel;physica status solidi (a);2020-01-24
4. Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing;IEEE Journal of the Electron Devices Society;2020
5. Advances in La-Based High-k Dielectrics for MOS Applications;Coatings;2019-03-27
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