High‐Performance Back‐Channel‐Etched Thin‐Film Transistors with an InGaO/InZnO Stacked Channel-Reference-Cited by-同舟云学术

High‐Performance Back‐Channel‐Etched Thin‐Film Transistors with an InGaO/InZnO Stacked Channel

Published:2020-01-24 Issue:5 Volume:217 Page:1900773
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Zhao Mingjie¹^ORCID,Zhang Zewang¹²,Xu Yingchao¹,Xu Daisheng¹,Zhang Jiyan¹,Huang Zhangchao¹

Affiliation:

1. Fujian Key Laboratory of Optoelectronic Technology and DevicesKey Laboratory for Optoelectronic Technology of Fujian Higher EducationXiamen University of Technology Xiamen 361024 P. R. China

2. College of Information Science and Electronic EngineerPolytechnic InstituteZhejiang University Hangzhou 310058 P. R. China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Fujian Province

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900773

Reference28 articles.

1. Enhanced Reliability of a-IGZO TFTs with a Reduced Feature Size and a Clean Etch-Stopper Layer Structure

2. Effect of substrate temperature on sputtered indium-aluminum-zinc oxide films and thin film transistors

3. Quantitative Analysis of the Effect of Hydrogen Diffusion from Silicon Oxide Etch-Stopper Layer into Amorphous In–Ga–Zn–O on Thin-Film Transistor

4. Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors

5. Implementation of Self-Aligned Top-Gate Amorphous Zinc Tin Oxide Thin-Film Transistors

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4. Performance improvement of thin-film transistors with In₂O₃ channel engineering;Journal of Asian Ceramic Societies;2022-07-03

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