Performance improvement of thin-film transistors with In2O3 channel engineering
Author:
Affiliation:
1. College of Physics, Qingdao University, Qingdao, Shandong, China
2. College of Microtechnology & Nanotechnology, Qingdao University, Qingdao, Shandong, China
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Publisher
Informa UK Limited
Subject
Ceramics and Composites
Link
https://www.tandfonline.com/doi/pdf/10.1080/21870764.2022.2101597
Reference26 articles.
1. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
2. Ultra-Flexible, “Invisible” Thin-Film Transistors Enabled by Amorphous Metal Oxide/Polymer Channel Layer Blends
3. High-Performance Indium Oxide Thin-Film Transistors With Aluminum Oxide Passivation
4. Electrospun ZnSnO Nanofibers for Neuromorphic Transistors With Ultralow Energy Consumption
5. Field-Effect Transistors Based on Welded SnGaO Nanowire Networks
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1. The effects of Co doping on the gas sensing performance of In2O3 porous nanospheres;Sensors and Actuators B: Chemical;2024-03
2. Multifunctional Multigate One-Transistor with Thin Advanced Materials, Logic-in-Memory, and Artificial Synaptic Behaviors;ACS Applied Materials & Interfaces;2023-11-22
3. Recent advances of In2O3-based thin-film transistors: A review;Applied Surface Science Advances;2023-08
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