Ultra-Flexible, “Invisible” Thin-Film Transistors Enabled by Amorphous Metal Oxide/Polymer Channel Layer Blends-Reference-Cited by-同舟云学术

Ultra-Flexible, “Invisible” Thin-Film Transistors Enabled by Amorphous Metal Oxide/Polymer Channel Layer Blends

Published:2015-02-25 Issue:14 Volume:27 Page:2390-2399
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Yu Xinge¹²,Zeng Li³,Zhou Nanjia⁴,Guo Peijun⁴,Shi Fengyuan⁴,Buchholz Donald B.⁴,Ma Q.⁵,Yu Junsheng²,Dravid Vinayak P.⁴,Chang Robert P. H.⁴,Bedzyk Michael⁴,Marks Tobin J.¹,Facchetti Antonio¹⁶

Affiliation:

1. Department of Chemistry; Northwestern University; 2145 Sheridan Road Evanston IL 60208 USA

2. State Key Laboratory of Electronic Thin Films and Integrated Devices; School of Optoelectronic Information; University of Electronic Science and Technology of China (UESTC); Chengdu 610054 China

3. Applied Physics Program and the Materials Research Center; Northwestern University; 2220 Campus Dr. Evanston IL 60208 USA

4. Department of Materials Science and Engineering; the Materials Research Center; Northwestern University; 2220 Campus Dr. Evanston IL 60208 USA

5. Argonne National Lab; 9700 South Cass Avenue Lemont IL 60439 USA

6. Polyera Corporation; 8045 Lamon Avenue Skokie IL 60077 USA

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201405400/fullpdf

Reference54 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors