Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors-Reference-Cited by-同舟云学术

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Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors

Published:2008-08-04 Issue:5 Volume:93 Page:053501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Park Jaechul,Song Ihun,Kim Sunil,Kim Sangwook,Kim Changjung,Lee Jaecheol,Lee Hyungik,Lee Eunha,Yin Huaxiang,Kim Kyoung-Kok,Kwon Kee-Won,Park Youngsoo

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2966145

Reference15 articles.

1. ZnO-based transparent thin-film transistors

2. High quality ZnO layers with adjustable refractive indices for integrated optics applications

3. Heterojunction with ZnO polycrystalline thin films for optoelectronic devices applications

4. Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films

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1. Floating body effect in indium–gallium–zinc–oxide (IGZO) thin-film transistor (TFT);Scientific Reports;2024-05-02

2. Origin of the High Density of Oxygen Vacancies at the Back Channel of Back-Channel-Etched a-InGaZnO Thin-Film Transistors;Micromachines;2024-03-16

3. Continuous-Wave Green Laser Activation of Transparent InZnO Electrodes for Fully Solution-Processed Oxide Thin-Film Transistors;ACS Applied Electronic Materials;2023-10-24

4. Influence of Channel Surface with Ozone Annealing and UV Treatment on the Electrical Characteristics of Top-Gate InGaZnO Thin-Film Transistors;Materials;2023-09-11

5. Deep Sub-Micron Self-Aligned Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With Low-Resistance Source/Drain;IEEE Electron Device Letters;2023-08

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