Abstract
Abstract
In this study, the effect of oxygen plasma treatment (OPT) on the electrical performance of the SnO
x
thin film transistors (TFTs) were investigated. The SnO
x
thin films were fabricated by solution process and integrated into the TFTs as channels. According to the x-ray photoelectric spectroscopy analysis, the oxygen vacancies in the SnO
x
thin films are significantly reduced after OPT. The electrical performances of the SnO
x
TFTs treated with various plasma power and treatment time were systematically studied. Compared with untreated SnO
x
TFT, the one with OPT of 40 W for 90 s exhibits optimum electrical performance, including the variation of the current on/off ratio (I
on/I
off) from ∼103 to 107 and threshold voltage (V
TH) from −10.78 to 3.97 V. Meanwhile, the operation mode of the SnO
x
TFTs is changed from depletion mode to enhancement mode. When the SnO
x
TFT is integrated with high-k Al2O3 dielectric, the TFT exhibits better electrical performance, including the V
TH of 0.14 V, an I
on/I
off of 107, a field-effect mobility (µ
FE) of 5.57 cm2 V−1 s−1, and a subthreshold swing of 570 mV dec−1. These results prove that the OPT process for SnO
x
TFTs is a facile and efficient method in the flat panel display industries.
Funder
National Natural Science Foundation of China
Research and Development Program of China
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
4 articles.
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