A New Simulation Approach to Investigate Avalanche Behavior-Reference-Cited by-同舟云学术

A New Simulation Approach to Investigate Avalanche Behavior

Published: Issue: Volume: Page:9-14
ISSN:
Container-title:Innovations and Advanced Techniques in Systems, Computing Sciences and Software Engineering
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Author:

Pawel I.,Siemieniec R.

Publisher

Springer Netherlands

Link

http://link.springer.com/content/pdf/10.1007/978-1-4020-8735-6_3.pdf

Reference15 articles.

1. I. Pawel, R. Siemieniec, M. Rösch, F. Hirler, C. Geissler, A. Pugatschow and L.J. Balk “Design of Avalanche Capability of Power MOSFETs by Device Simulation”, inProc. EPE 2007, 2007

2. R. Siemieniec, F. Hirler, A. Schlögl, M. Rösch, N. Soufi-Amlashi, J. Ropohl and U. Hiller “A new fast and rugged 100 V power MOSFET”, inProc. EPE-PEMC 2006, 2006

3. K. Fischer and K. Shenai “Electrothermal Effects During Unclamped Inductive Switching (UIS) of Power MOSFETs” IEEE Transactions on Electron Devices, 1997, 44, 874-878,

4. A.I. Deckelmann, G.K. Wachutka, F. Hirler, J. Krumrey and R. Henninger “Avalanche Breakdown Capability of Power DMOS Transistors and the Wunsch-Bell Relation” Microelectronics Reliability, 2003, 43, 1895-1900

5. A. Vrbicky, D. Donoval, J. Marek, A. Chvala and P. Beno “Analysis of Electro-Thermal Behaviour of DMOS Transistor Structure during UIS Test” Proc. ISPS, 2006

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