Novel failure mechanism and improvement for split-gate trench MOSFET with large current under unclamped inductive switch stress-Reference-Cited by-同舟云学术

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Novel failure mechanism and improvement for split-gate trench MOSFET with large current under unclamped inductive switch stress

Published:2018-04 Issue: Volume:116 Page:151-163
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Tian Ye,Yang Zhuo,Xu Zhiyuan,Liu Siyang,Sun Weifeng,Shi Longxing,Zhu Yuanzheng,Ye Peng,Zhou Jincheng

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Jiangsu Province Scientific and Technological Achievements

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference19 articles.

1. 60V rating split gate trench MOSFETs having best-in-class specific resistance and figure-of-merit;Park,2016

2. Process & design impact on BVDSS stability of a Shielded Gate Trench power MOSFET;Hossain,2014

3. Split-gate-enhanced UMOSFET with an optimized layout of trench surrounding mesa;Wang;IEEE Trans. Electron. Dev.,2012

4. ‘Field Balanced’ SG-RSO structure showing tremendous potential for low voltage trench MOSFETs;Tong,2009

5. Static and dynamic analysis of split-gate RESURF Stepped oxide (RSO) MOSFETs for 35V applications;Tong,2009

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1. Ruggedness of Silicon Power MOSFETs–Part II: Device Design Failures and Modeling: A Review;IEEE Transactions on Electron Devices;2024-06

2. Establishment of analytical model for electrostatic discharge gate-to-source capacitance of power metal-oxide-semiconductor field-effect transistor;Acta Physica Sinica;2024

3. A novel 4H-SiC multiple stepped SGT MOSFET with improved high frequency figure of merit;Physica Scripta;2023-11-21

4. Study on formation mechanism of different differential resistance branches at avalanche breakdown curve of SGT-MOSFET;Microelectronics Reliability;2023-04

5. Distributed field plate effects in split-gate trench MOSFETs;2023 35th International Conference on Microelectronic Test Structure (ICMTS);2023-03-27

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