Distributed field plate effects in split-gate trench MOSFETs-Reference-Cited by-同舟云学术

Distributed field plate effects in split-gate trench MOSFETs

Published:2023-03-27 Issue: Volume: Page:
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Container-title:2023 35th International Conference on Microelectronic Test Structure (ICMTS)
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Author:

Tambone R.¹,Ferrara A.¹,Magrini F.²,Hoffmann A.²,Wood A.¹,Noebauer G.¹,Gondro E.²,Hueting R.J.E.³

Affiliation:

1. Infineon Technologies Austria AG, Siemenstrasse 2,Villach,Austria,9500

2. Infineon Technologies AG, Am Campeon 1,Neubiberg,Germany,85579

3. University of Twente, Drienerlolaan 5,NB Enschede,The Netherlands,7522

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10094038/10094053/10094167.pdf?arnumber=10094167

Reference10 articles.

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2. A New Simulation Approach to Investigate Avalanche Behavior

3. A TLP-based characterization method for transient gate biasing of MOS devices in high-voltage technologies;willemen;Electrical Overstress/Electrostatic Discharge Symposium Proceedings,2010

4. MOS Devices for Power Electronic Applications;baliga;28th European Solid-State Device Research Conference ESSDERC,1998

5. A review of RESURF technology

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