Ruggedness of Silicon Power MOSFETs–Part II: Device Design Failures and Modeling: A Review-Reference-Cited by-同舟云学术

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Ruggedness of Silicon Power MOSFETs–Part II: Device Design Failures and Modeling: A Review

Published:2024-06 Issue:6 Volume:71 Page:3458-3469
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Tambone R.¹^ORCID,Ferrara A.¹,Siemieniec R.¹^ORCID,Wood A.¹^ORCID,Magrini F.²,Hueting R. J. E.³^ORCID

Affiliation:

1. Infineon Technologies Austria AG, Villach, Austria

2. Infineon Technologies AG, Neubiberg, Germany

3. Group of Power Electronic and EMC (PE), Faculty of Electrical Engineering, Mathematics and Computer Science (EEMCS), University of Twente, Enschede, NB, The Netherlands

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10538150/10521479.pdf?arnumber=10521479

Reference129 articles.

1. The Trench Power MOSFET: Part I—History, Technology, and Prospects

2. The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, and Reliability

3. Full-Bridge DC-DC Power Converter for Telecom applications with Advanced Trench Gate MOSFETs

4. 20V MOSFETs for DC-DC converters in desktop computers and servers

5. New Failure Mechanism Induced by Current Limit for Superjunction MOSFET Under Single-Pulse UIS Stress

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