Full-Bridge DC-DC Power Converter for Telecom applications with Advanced Trench Gate MOSFETs

Author:

Bojoi Radu,Fusillo Filadelfo,Raciti Angelo,Musumeci Salvatore,Scrimizzi Filippo,Rizzo Santi

Publisher

IEEE

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Ruggedness of Silicon Power MOSFETs–Part II: Device Design Failures and Modeling: A Review;IEEE Transactions on Electron Devices;2024-06

2. Trench Split Gate MOSFET’s Inductive Switching;IEEE Transactions on Electron Devices;2022-09

3. Reliability Prediction and Assessment Models for Power Components: A Comparative Analysis;Archives of Computational Methods in Engineering;2022-08-23

4. Modelling and Experimental Validation of GaN Based Power Converter for LED Driver;2022 IEEE International Conference on Environment and Electrical Engineering and 2022 IEEE Industrial and Commercial Power Systems Europe (EEEIC / I&CPS Europe);2022-06-28

5. Wide SOA MOSFET technology for hot swap and inrush current limiter solutions;2021 AEIT International Conference on Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE);2021-11-17

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