Wide SOA MOSFET technology for hot swap and inrush current limiter solutions-Reference-Cited by-同舟云学术

Wide SOA MOSFET technology for hot swap and inrush current limiter solutions

Published:2021-11-17 Issue: Volume: Page:
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Container-title:2021 AEIT International Conference on Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE)
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Author:

Scrimizzi Filippo,Mistretta Carmelo,Gambino Giusy

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9662653/9662685/09662951.pdf?arnumber=9662951

Reference7 articles.

1. Electro-thermal instability in low voltage power MOS: Experimental characterization

2. Low Voltage Trench-Gate MOSFETs for High Efficiency Auxiliary Power Supply Applications

3. A new thermal model for power MOSFET devices accounting for the behavior in unclamped inductive switching

4. Investigations on Electro- Instability of Low Voltage Power MOSFETs: Theoretical Models and Experimental comparison results for different structures;consentino;PET 2004 Conference,2004

5. Low Voltage Trench-Gate MOSFET Power Losses Optimization in Synchronous Buck Converter Applications

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Above 48% Improvement of Wide SOA Enhancement Technology and Mechanism for 30-V SGT MOSFET on Application of Hot-Swap;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

2. A Split-Gate Power MOSFET Obtaining Ultra-Wide SOA Based on Time-Shared and Partitioned Conduction Gate Control;IEEE Journal of Emerging and Selected Topics in Power Electronics;2024-04

3. Modeling and design of a low-cost constant current electronic load;2023 15th Seminar on Power Electronics and Control (SEPOC);2023-10-22