Electro-thermal instability in low voltage power MOS: Experimental characterization-Reference-Cited by-同舟云学术

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Electro-thermal instability in low voltage power MOS: Experimental characterization

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Container-title:11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)
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Author:

Breglio G.,Frisina F.,Magri A.,Spirito P.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6175/16497/00764106.pdf?arnumber=764106

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ruggedness of Silicon Power MOSFETs—Part I: Cell Structure Design Related Failure: A Review;IEEE Transactions on Electron Devices;2024-06

2. A Split-Gate Power MOSFET Obtaining Ultra-Wide SOA Based on Time-Shared and Partitioned Conduction Gate Control;IEEE Journal of Emerging and Selected Topics in Power Electronics;2024-04

3. Triangular and Rectangular Power Pulses in Automotive MOSFETs Applications for Thermally Unstable Linear Mode;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

4. Test Structure Design for Defect Detection during Active Thermal Cycling;Sensors;2022-09-23

5. Wide SOA MOSFET technology for hot swap and inrush current limiter solutions;2021 AEIT International Conference on Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE);2021-11-17

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