Degradation and breakdown behaviors of SGTs under repetitive unclamped inductive switching avalanche stress

Abstract

The repetitive unclamped inductive switching (UIS) avalanche stress is conducted to investigate the degradation and breakdown behaviors of conventional shield gate trench MOSFET (C-SGT) and P-ring SGT MOSFETs (P-SGT). It is found that the static and dynamic parameters of both devices show different degrees of degradation. Combining experimental and simulation results, the hot holes trapped into the Si/SiO2 interface and the increase of crystal lattice temperature should be responsible for the degradation and breakdown behaviors. Moreover, under repetitive UIS avalanche stress, the reliability of P-SGT overcomes that of C-SGT, benefitting from the decreasing of the impact ionization rate at bottom of field oxide caused by the existence of P-ring.