Study of latch-up immunization in bulk CMOS integrated circuits exposed to transient ionizing radiation-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Study of latch-up immunization in bulk CMOS integrated circuits exposed to transient ionizing radiation

Published:2012-05-25 Issue:11 Volume:55 Page:3242-3247
ISSN:1674-7321
Container-title:Science China Technological Sciences
language:en
Short-container-title:Sci. China Technol. Sci.

Author:

Li RuiBin,Chen Wei,Lin DongSheng,Yang ShanChao,Bai XiaoYan,Wang GuiZhen,Liu Yan,Qi Chao,Ma Qiang

Publisher

Springer Science and Business Media LLC

Subject

General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/s11431-012-4895-5.pdf

Reference13 articles.

1. Wirth J L, Rogers S C. The transient response of transistors and diodes to ionizing radiation. IEEE Trans Nucl Sci, 1964, NS-11: 24–35

2. Kinoshita G. Radiation induced regeneration in Ics. IEEE Trans Nucl Sci, 1965, NS-12: 83–89

3. Coppage F N, Evans D C. Characteristics of destruction from latchup in CMOS. IEEE Trans Nucl Sci, 1977, NS-24: 2226–2233

4. Qin J R, Chen S M, Liu B W, et al. Research on single event transient pulse quenching effect in 90 nm CMOS technology. Sci China Tech Sci, 2011, 54(11): 3064–3069

5. Gregory B L, Shafer B D. Latch-up in CMOS integrated circuits. IEEE Trans Nucl Sci, 1973, NS-20: 293–299

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of the transient dose rate effect on clock resources of JXCV5SX95T FPGA;Microelectronics Reliability;2023-12

2. Investigation of Transient Dose-Rate Effect on High-Speed Comparator SB9696;IEEE Transactions on Nuclear Science;2023-07

3. Investigation on Transient Ionizing Radiation Effects in a 4-Mb SRAM With Dual Supply Voltages;IEEE Transactions on Nuclear Science;2022-03

4. TCAD simulation analysis of vertical parasitic effect induced by pulsed γ- ray in NMOS from 180 nm to 40 nm technology nodes;Acta Physica Sinica;2022

5. Dependence of decay time of the photocurrent induced by transient ionizing radiation on TID in NPN bipolar transistors;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2020-05

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3