Investigation on Transient Ionizing Radiation Effects in a 4-Mb SRAM With Dual Supply Voltages-Reference-Cited by-同舟云学术

Investigation on Transient Ionizing Radiation Effects in a 4-Mb SRAM With Dual Supply Voltages

Published:2022-03 Issue:3 Volume:69 Page:340-348
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Li Tongde¹^ORCID,Zhao Yuanfu¹,Wang Liang¹,Shu Lei¹,Zheng Hongchao¹,Cao Weiyi¹,Yuan Jingshuang¹,Li Junlin²,Wang Chenhui²

Affiliation:

1. Laboratory of Science and Technology on Radiation Hardened Integrated Circuits, China Aerospace Science and Technology Corporation (CASC), Fengtai, Beijing, China

2. Northwest Institute of Nuclear Technology, Xi’an, China

Funder

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/9735177/09701337.pdf?arnumber=9701337

Reference24 articles.

1. Computer simulation of ionizing radiation burnout in power MOSFETs

2. The study of the transient radiation effects on electronic devices caused by pulsed high energy gamma-ray;oh;Proc 12th Int Conf Control Automat Syst,2012

3. The Transient Response of Transistors and Diodes to Ionizing Radiation

4. The Analysis of Radiation Effects in Semiconductor Junction Devices

5. Photocurrent modeling of modern microcircuit pn junctions

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of the transient dose rate effect on clock resources of JXCV5SX95T FPGA;Microelectronics Reliability;2023-12

2. Transient Dose Rate Effect Between System-in-Package and Printed Circuit Boards: A Comparative Experimental Study;IEEE Transactions on Nuclear Science;2023-08

3. The Effects of Gamma Ray Integrated Dose on a Commercial 65-nm SRAM Device;IEEE Transactions on Nuclear Science;2023-08

4. Research on High-Dose-Rate Transient Ionizing Radiation Effect in Nano-Scale FDSOI Flip-Flops;Electronics;2023-07-20

5. Investigation of Transient Dose-Rate Effect on High-Speed Comparator SB9696;IEEE Transactions on Nuclear Science;2023-07