Transient Dose Rate Effect Between System-in-Package and Printed Circuit Boards: A Comparative Experimental Study

Author:

Li Yang1ORCID,Guo Yaxin1ORCID,Li Junlin2,He Chaohui1,Peng Zhigang1,Liu Jiaxin1,Li Ruibin2,Zhao Hongchao3,Chen Wei2ORCID,Li Yonghong1,Li Pei1ORCID,Xiong Cen3

Affiliation:

1. School of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an, China

2. State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi’an, China

3. Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang, China

Funder

National Natural Science Foundation of China

China Scholarship Council

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Reference34 articles.

1. Transient ionizing radiation effects in devices and circuits

2. Study on the transient ionization radiation damage pattern of 0.18 ?m SRAM;junlin;Proc Int Conf Radiat Effects Electron Devices (ICREED),2018

3. A Modified Steady-State Method for Space Charge-Limited Effect of SGEMP

4. Investigation on Transient Ionizing Radiation Effects in a 4-Mb SRAM With Dual Supply Voltages

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