Transient ionizing radiation effects in devices and circuits

Author:

Alexander D.R.1

Affiliation:

1. Inst. for Space & Defense Electron., Vanderbilt Univ., Nashville, TN, USA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Cited by 60 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Two-Dimensional Numerical Simulation Study on the Synergistic Effects of Transient Ionizing Radiation and Electromagnetic Pulse on Bipolar Junction Transistor;2024 IEEE Joint International Symposium on Electromagnetic Compatibility, Signal & Power Integrity: EMC Japan / Asia-Pacific International Symposium on Electromagnetic Compatibility (EMC Japan/APEMC Okinawa);2024-05-20

2. Transient dose rate effects in silicon–germanium heterojunction bipolar transistors;AIP Advances;2023-12-01

3. Analysis of the transient dose rate effect on clock resources of JXCV5SX95T FPGA;Microelectronics Reliability;2023-12

4. Observation and Origin of Anomalous Early Recovery of Base Currents in Low-Dose-Rate γ-Ray-Irradiated PNP Transistors;ACS Applied Electronic Materials;2023-11-08

5. Transient Dose Rate Effect Between System-in-Package and Printed Circuit Boards: A Comparative Experimental Study;IEEE Transactions on Nuclear Science;2023-08

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