Research on High-Dose-Rate Transient Ionizing Radiation Effect in Nano-Scale FDSOI Flip-Flops-Reference-Cited by-同舟云学术

Research on High-Dose-Rate Transient Ionizing Radiation Effect in Nano-Scale FDSOI Flip-Flops

Published:2023-07-20 Issue:14 Volume:12 Page:3149
ISSN:2079-9292
Container-title:Electronics
language:en
Short-container-title:Electronics

Author:

Li Tongde¹²,Yuan Jingshuang¹²,Bai Yang¹²,Yu Chunqing¹²,Gou Chunliang¹²,Shu Lei¹²^ORCID,Wang Liang¹²,Zhao Yuanfu¹²³

Affiliation:

1. Beijing Microelectronics Technology Institute, Beijing 100076, China

2. Laboratory of Science and Technology on Radiation-Hardened Integrated Circuits in CASC, Beijing 100076, China

3. China Academy of Aerospace Electronics Technology, Beijing 100094, China

Abstract

This paper presents an experimental study on the high-dose-rate transient ionizing radiation response and influencing factors of a Nano-Scale Fully Depleted Silicon-On-Insulator (FDSOI) D flip-flops (DFFs) circuit. Results indicate that data errors occur in DFFs at the lowest dose rate of 4.70 × 1011 rad(Si)/s in experiments, and the number of data errors shows a nonlinear increasing trend with the increase in dose rate and supply voltage. Three-dimensional technology computer-aided design (TCAD) simulations were conducted to analyze the transient photocurrent and charge collection mechanism at advanced process. The simulation results indicated that the charge collection efficiency is heightened with an increase in supply voltage, resulting in the higher photocurrent. This plays a major role in the process of charge collection for Ultra-Thin Body and Buried oxide (UTBB) FDSOI technology. The investigation into the high-dose-rate transient ionizing radiation effect (HDR-TIRE) in Nano-Scale FDSOI DFFs will aid in the assessment and application of advanced integrated circuits in aerospace.

Funder

Qian Xuesen Youth Innovation Fund

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering

Link

https://www.mdpi.com/2079-9292/12/14/3149/pdf

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