The Effects of Gamma Ray Integrated Dose on a Commercial 65-nm SRAM Device
Author:
Affiliation:
1. Electrical and Computer Engineering Department, Brigham Young University, Provo, UT, USA
2. Sandia National Laboratories, Albuquerque, NM, USA
Funder
Department of the Defense, Defense Threat Reduction Agency
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Link
https://ieeexplore.ieee.org/ielam/23/10221199/10153483-aam.pdf
Reference33 articles.
1. SEU Characterization of Three Successive Generations of COTS SRAMs at Ultralow Bias Voltage to 14.2-MeV Neutrons
2. Evaluation of a COTS 65-nm SRAM Under 15 MeV Protons and 14 MeV Neutrons at Low VDD
3. Similarity Analysis on Neutron- and Negative Muon-Induced MCUs in 65-nm Bulk SRAM
4. Measurement of Single-Event Upsets in 65-nm SRAMs Under Irradiation of Spallation Neutrons at J-PARC MLF
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