Dependence of decay time of the photocurrent induced by transient ionizing radiation on TID in NPN bipolar transistors-Reference-Cited by-同舟云学术

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Dependence of decay time of the photocurrent induced by transient ionizing radiation on TID in NPN bipolar transistors

Published:2020-05 Issue: Volume:470 Page:32-37
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Li RuiBin,Wang ChenHui,He ChaoHui,Chen Wei,Li JunLin,Qi Chao,Liu Yan

Funder

Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference19 articles.

1. The influence of bias conditions on ionizing radiation damage of NPN and PNP transistors;Li;Acta Phys. Sin.,2013

2. Transient ionizing radiation effects in devices and circuits;Alexander;IEEE Trans. Nucl. Sci.,2003

3. Modeling ionizing radiation effects in solid state materials and CMOS devices;Barnaby;IEEE Trans. Nucl. Sci.,2009

4. Comparison of ionizing-radiation-induced gain degradation in lateral, substrate, and vertical PNP BJTs;Schmidt;IEEE Trans. Nucl. Sci.,1995

5. Total dose effects in conventional bipolar transistors and linear integrated circuits;Johnston;IEEE Trans. Nucl. Sci.,1994

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. TCAD simulation analysis of vertical parasitic effect induced by pulsed γ- ray in NMOS from 180 nm to 40 nm technology nodes;Acta Physica Sinica;2022

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