Investigation of capacitance characteristics in metal/high-k semiconductor devices at different parameters and with and without interface state density (traps)-Reference-Cited by-同舟云学术

Investigation of capacitance characteristics in metal/high-k semiconductor devices at different parameters and with and without interface state density (traps)

Published:2017-08-21 Issue:5 Volume:40 Page:1035-1041
ISSN:0250-4707
Container-title:Bulletin of Materials Science
language:en
Short-container-title:Bull Mater Sci

Author:

Hlali S,Hizem N,Kalboussi A

Publisher

Springer Science and Business Media LLC

Subject

Mechanics of Materials,General Materials Science

Link

http://link.springer.com/article/10.1007/s12034-017-1443-8/fulltext.html

Reference27 articles.

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4. Wilk G D, Wallace R M and Anthony J M 2001 J. Appl. Phys. 89 5243

5. Cho M, Park H B, Park J et al 2003 J. Appl. Phys. 94 2563

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