Abstract
This research presents a study of the electrical characteristics C-V and I-V for the new MIS structure TiN/Al2O3/P-Si, simulated using Silvaco TCAD software. The analysis reveals the impact of various parameters such as frequency, temperature, oxide thickness, surface of the structure, and doping on the characteristics. The numerical simulations show good agreement with theoretical curves from literature, demonstrating proficiency in simulation techniques. The studies indicate that as temperature rises, there is a decrease in flat band voltage possibly due to reduced total charge density in the oxide and interface defect density. Notably, a weak inversion zone is observed at temperatures between 77 K and 300 K. Furthermore, frequency has a significant impact on the C-V characteristic at 1 GHz. Analysis of I-V reveals an asymmetry in temperature activation, suggesting the presence of two mechanisms of current conduction. The study also highlights that increasing doping values result in higher current density in the negative voltage regime, while simulated leakage currents for TiN/Al2O3/P-Si capacitors with varying dielectric thicknesses show higher current density for electron injection from the gate compared to the substrate due to band diagram asymmetry, leading to non-uniform leakage current behavior influenced by decreasing oxide thickness.