Barrier characteristics of Pt/Ru Schottky contacts on n-type GaN based on I–V–T and C–V–T measurements
Author:
Publisher
Springer Science and Business Media LLC
Subject
Mechanics of Materials,General Materials Science
Link
http://link.springer.com/content/pdf/10.1007/s12034-011-0262-6.pdf
Reference45 articles.
1. Aboelfotoh M O 1989 J. Appl. Phys. 66 262
2. Ayyildiz E, Cetin H and Horvath Zs J 2005 Appl. Surf. Sci. 252 1153
3. Benamara Z, Akkal B, Talbi A and Gruzza B 2006 Mater. Sci. Eng. C26 519
4. Chand S and Bala S 2005 Appl. Surf. Sci. 252 358
5. Chand S and Kumar J 1995 Semicond. Sci. Technol. 10 1680
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