Aberrant photoelectric effect in the topological insulator/n-GaN heterojunction (Bi<sub>2</sub>Te<sub>3</sub>/n-GaN) under unpolarized illumination-Reference-Cited by-同舟云学术

Aberrant photoelectric effect in the topological insulator/n-GaN heterojunction (Bi₂Te₃/n-GaN) under unpolarized illumination

Published:2024 Issue:2 Volume:16 Page:604-613
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Ahmad Faizan¹,Kandpal Kavindra²^ORCID,Singh Roshani³,Kumar Rachana⁴,Kumar Pramod³^ORCID

Affiliation:

1. Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ-85281, USA

2. Department of Electronics and Communication Engineering, IIIT-Allahabad, Prayagraj, 211012, India

3. Spintronics and Magnetic Materials Laboratory, Department of Applied Sciences, IIIT-Allahabad, Prayagraj, 211012, India

4. ASSIST Division, CSIR-Indian Institute of Toxicology Research, Lucknow, Uttar Pradesh, 226024, India

Abstract

Hint of the band gap modulation in the polycrystalline topological insulator Bi2Te3 film under unpolarized light and realization of photodetector with a typical range.

Funder

Department of Science and Technology, Ministry of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NR/D3NR03360K

Reference64 articles.

1. A review of GaN-based optoelectronic devices on silicon substrate

2. GaN-based ultraviolet light-emitting diodes with AuCl_3-doped graphene electrodes

3. Fabrication and characterization of graphene/AlGaN/GaN ultraviolet Schottky photodetector

4. Manipulation of polarization effect to engineer III-nitride HEMTs for normally-off operation

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