Effect of an external/internal magnetic field on the photocurrent in Py-topological insulator heterojunction Ni80Fe20/TI (Bi2Te3/Bi2Se3/Bi2Te2Se)/p-Si devices-Reference-Cited by-同舟云学术

Effect of an external/internal magnetic field on the photocurrent in Py-topological insulator heterojunction Ni₈₀Fe₂₀/TI (Bi₂Te₃/Bi₂Se₃/Bi₂Te₂Se)/p-Si devices

Published:2024 Issue:23 Volume:26 Page:16708-16718
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Singh Roshani¹,Yadav Surendra Kumar¹,Kumar Rachana²,Haldar Arabinda³^ORCID,Kumar Pramod¹^ORCID

Affiliation:

1. Spintronic and Magnetic Materials Laboratory, Department of Applied sciences, Indian Institute of Information Technology, Allahabad, Prayagraj, 211015, India

2. CSIR - Indian Institute of Toxicology Research, Lucknow-226001, India

3. Department of Physics, Indian Institute of Technology Hyderabad, Kandi 502284, Telangana, India

Abstract

This study demonstrates the fabrication and study of a permalloy (Py)/topological insulator heterojunction, i.e., the Ni80Fe20/TI(Bi2Te3/Bi2Se3/Bi2Te2Se)/p-Si heterojunction, for spintronic device applications at room temperature.

Funder

Science and Engineering Research Board

Department of Science and Technology, Ministry of Science and Technology, India

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CP/D4CP01557F

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