Analysis of the Current Transport Characteristics (CTCs) in the Au/n-Si Schottky Diodes (SDs) with Al2O3 Interfacial Layer over Wide Temperature Range

Abstract

Temperature dependent electrical-parameters and CTCs in Au/Al2O3/n-Si SDs have been analysed between 200 K and 400 K using current/voltage (IV) characteristics. While the value of quality/ideality factor (n) decreases, zero bias potential barrier height (BH, ΦB0) increases with increasing temperature. The value of Richardson constant (A*) and activation energy (Ea) were also derived from the conventional Richardson plot (RP) as 0.567 eV and 7.34 × 10−3 A.cm−2K−2, respectively. This low A* value shows that deviation from standard thermionic-emission (TE) model and to determine whether this situation may be described by Gaussian-distribution (GD) model or not, ΦBo vs n and ΦBo vs q/(2kT) curves were illustrated. The Φ ¯ B value was found as 1.19 eV from the linear ΦB0 vs n plot for ideal case (n = 1). The mean-value of BH ( Φ ¯ B 0 ) and standart deviation (σ s) values were found from the ΦBo vs q/(2kT) curve as 1.130 eV and 0.127 V, respectively. By using value of σ s, RP was modified and then Φ ¯ B 0 and A* values were found as 1.128 eV and 108.88 Acm−2K−2, respectively, and this value of A* very close to its theoretical value (=112 Acm−2K−2). The surface state density (Nss) were also obtained from the forward bias IV data for three-temperatures.