Electrical and dielectric characterization of Ge quantum dots embedded in MIS structure (AuPd/SiO2:Ge QDs/n-Si) grown by MBE-Reference-Cited by-同舟云学术

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Electrical and dielectric characterization of Ge quantum dots embedded in MIS structure (AuPd/SiO2:Ge QDs/n-Si) grown by MBE

Published:2024-07 Issue: Volume:685 Page:415962
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Alenizi Maha A.,Aouassa Mansour,Bouabdellaoui Mohammed,Saron K.M.A.,Aladim A.K.,Ibrahim Mohammed,Berbezier Isabelle

Publisher

Elsevier BV

Reference75 articles.

1. Infrared quantum dots: progress, challenges, and opportunities;Lu;ACS Nano,2019

2. Magnetic Ge:Mn nanocrystals grown by MBE on insulator substrate for solar cell and photodetector applications;Aouassa;Appl. Surf. Sci.,2021

3. Fully tunable hyperfine interactions of hole spin qubits in Si and Ge quantum dots;Bosco;Phys. Rev. Lett.,2021

4. Fabrication of MIS photodetector with Ge nanocrystals grown by MBE;Aouassa;J. Mater. Sci. Mater. Electron.,2021

5. Charge trapping properties of Ge nanocrystals grown via solid-state dewetting;Aouassa;J. Alloys Compd.,2018

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