Transport and dielectric properties of MIS structure with embedded Si QDs (AuPd/SiO2:Si QDs/n-Si) grown by MBE-Reference-Cited by-同舟云学术

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Transport and dielectric properties of MIS structure with embedded Si QDs (AuPd/SiO2:Si QDs/n-Si) grown by MBE

Published:2024-07 Issue: Volume:685 Page:415966
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Guizani Ikram,Aouassa Mansour,Bouabdellaoui Mohammed^ORCID,Berbezier Isabelle

Publisher

Elsevier BV

Reference52 articles.

1. Infrared quantum dots: progress, challenges, and opportunities;Lu;ACS Nano,2019

2. Silicon nanocrystals embedded in nanolayered silicon oxide for crystalline silicon solar Cells;Cite this;Tsubata;ACS Appl. Nano Mater.,2022

3. Fully tunable hyperfine interactions of hole spin qubits in Si and Ge quantum dots;Bosco;Phys. Rev. Lett.,2021

4. High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications;Aouassa;J. Mater. Sci. Mater. Electron.,2022

5. Effects of hydrogen termination of CVD diamond layers;Mosińska;Opt. Mater.,2020

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