Efficiency Improvements in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes with Graded Superlattice Last Quantum Barrier and Without Electron Blocking Layer-Reference-Cited by-同舟云学术

Efficiency Improvements in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes with Graded Superlattice Last Quantum Barrier and Without Electron Blocking Layer

Published:2018-10-16 Issue:1 Volume:48 Page:460-466
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Zhang Xiu,Sun Huiqing,Huang Jing,Liu Tianyi,Wang Xin,Zhang Yaohua,Li Shupeng,Zhang Sheng,Hou Yufei,Guo Zhiyou

Funder

Science and Technology Program Project for the Innovation of Forefront and Key Technology of Guangdong Province, China

Institute of Science and Technology Collaborative Innovation Major Project of Guangzhou, China

Special Fund for Scientific and Technological Innovation and Development of Guangzhou - Foreign Science and Technology Cooperation Project, China

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1007/s11664-018-6716-5/fulltext.html

Reference22 articles.

1. H.Y. Ryu, Nanoscale Res. Lett. 9, 1 (2014).

2. D. Tobjörk, H. Aarnio, P. Pulkkinen, R. Bollström, A. Määttänen, and P. Ihalainen, Thin Solid Films 520, 2949 (2012).

3. M.A. Würtele, T. Kolbe, M. Lipsz, A. Külberg, M. Weyers, M. Kneissl, and M. Jekel, Water Res. 45, 1481 (2011).

4. M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, and Z. Yang, Semicond. Sci. Technol. 26, 014036 (2011).

5. S. Zhou, H. Hu, X. Liu, M. Liu, X. Ding, C. Gui, S. Liu, and L. Jay Guo, Jpn. J. Appl. Phys. 56, 111001 (2017).

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