Optimized carrier confinement in deep-ultraviolet light-emitting diodes with AlInGaN/AlInN superlattice electron blocking layer

Author:

Jamil Tariq,Usman Muhammad

Funder

Ghulam Ishaq Khan Institute of Engineering Sciences and Technology

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference30 articles.

1. Ultraviolet light-emitting diodes based on group three nitrides;Khan;Nat. Photonics,2008

2. Ultraviolet germicidal irradiation handbook: UVGI for air and surface disinfection;Kowalski,2010

3. Application of GaN-based ultraviolet-C light emitting diodes–UV LEDs–for water disinfection;Würtele;Water Res.,2011

4. Deep-ultraviolet light-emitting diodes;Shur;IEEE Trans. Electron Devices,2010

5. Development and future of ultraviolet light-emitting diodes: UV-LED will replace the UV lamp;Muramoto;Semicond. Sci. Technol.,2014

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