Affiliation:
1. School of Materials Science and Engineering Jiangsu University Zhenjiang 212013 China
2. EpiTop Optoelectronic Co., Ltd. Ma'anshan 243000 China
3. Ma'anshan Jason Semiconductor Co., Ltd. Ma'anshan 243000 China
Abstract
The performance improvements of AlGaN‐based deep ultraviolet light‐emitting diodes (DUV‐LEDs) with multigradient electron blocking layer (EBL) and triangular last quantum barrier (LQB) are investigated. The results show that the maximum internal quantum efficiency (IQE) is improved by 44.9% and light output power (LOP) is improved by 58.1% at 200 A cm−2, exhibiting a tremendous improvement compared to the conventional structure. These improvements are mainly attributed to the fact that both multigradient EBL and triangular LQB can generate negative polarization charges in the graded composition layer, which leads to a significant increase in hole concentration compared to the conventional EBL and LQB structures. Meanwhile, the multigradient EBL can transform the conventional triangular barrier into an arc‐shaped barrier, increasing the electron potential barrier height and decreasing the hole potential barrier height. This unique design suppresses electron leakage and enhances hole injection, leading to a significant enhancement of the IQE and alleviation of the efficiency droop.
Funder
National Natural Science Foundation of China
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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