The effect of different AlGaN insertion layer thicknesses on the photoelectric properties of InGaN/AlGaN near UV light emitting diodes
Author:
Funder
Natural Science Foundation of Fujian Province
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference33 articles.
1. 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes;Chang;IEEE J Select Topics Quantum Electron,2002
2. High-Power and High-Efficiency InGaN-Based Light Emitters;Laubsch;IEEE Trans Electron Devices,2010
3. Ultraviolet light-emitting diodes based on group three nitrides;Khan;Nature Photon,2008
4. Dual-wavelength ultraviolet photodetector based on vertical (Al, Ga)N nanowires and graphene*;Zhou;Chin Phys B,2021
5. Novel Radiation Device for Application in the UV-A and UV-B Range;Laube;ECS J Solid State Sci Technol,2020
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