Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures
Author:
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Link
http://link.springer.com/content/pdf/10.1186/1556-276X-9-58.pdf
Reference26 articles.
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3. Hirayama H: Recent progress of 220–280 nm-band AlGaN based deep-UV LEDs. Proc SPIE 2010, 7617: 76171G.
4. Kneissl M, Kolbe T, Chua C, Kueller V, Lobo N, Stellmach J, Knauer A, Rodriguez H, Einfeldt S, Yang Z, Johnson NM, Weyers M: Advances in group III-nitride-based deep UV light-emitting diode technology. Semicond Sci Technol 2011, 26: 014036. 10.1088/0268-1242/26/1/014036
5. Ryu HY, Choi IG, Choi HS, Shim JI: Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes. Appl Phys Express 2013, 6: 062101. 10.7567/APEX.6.062101
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