Is It Possible to Make Thin p-GaN Layer for AlGaN-Based Deep Ultraviolet Micro Light Emitting Diodes?-Reference-Cited by-同舟云学术

Is It Possible to Make Thin p-GaN Layer for AlGaN-Based Deep Ultraviolet Micro Light Emitting Diodes?

Published:2024-03 Issue:3 Volume:45 Page:316-319
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chen Yongfei¹,Chu Chunshuang¹^ORCID,Jia Tong¹,Jia Yaru¹,Tian Kangkai²,Zhang Yonghui¹^ORCID,Zhang Zi-Hui²^ORCID

Affiliation:

1. State Key Laboratory of Reliability and Intelligence of Electrical Equipment, the Key Laboratory of Electronic Materials and Devices of Tianjin, and the School of Electronics and Information Engineering, Hebei University of Technology, Beichen, Tianjin, China

2. School of Integrated Circuits, Guangdong University of Technology, Guangzhou, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology

China Postdoctoral Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/55/10449685/10385150.pdf?arnumber=10385150

Reference34 articles.

1. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

2. Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review

3. Advances in group III-nitride-based deep UV light-emitting diode technology

4. Enhanced Carrier Injection in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Polarization Engineering at the LQB/p-EBL Interface

5. The influences of AlGaN barrier epitaxy in multiple quantum wells on the optoelectrical properties of AlGaN-based deep ultra-violet light-emitting diodes

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