Enhanced Carrier Injection in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Polarization Engineering at the LQB/p-EBL Interface
Author:
Affiliation:
1. School of Microelectronics, Institute of Novel Semiconductors, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University, Jinan, China
Funder
Shenzhen Science and Technology Program
Basic and Applied Basic Research Foundation of Guangdong Province
Natural Science Foundation of Shandong Province
Qilu Young Scholar Program
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics
Link
http://xplorestaging.ieee.org/ielx7/4563994/9758988/09749954.pdf?arnumber=9749954
Reference39 articles.
1. Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer
2. Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency
3. Ultra-violet light-emitting diodes with quasi acceptor-free AlGaN polarization doping
4. Enhanced external quantum efficiencies of AlGaN-based deep-UV LEDs using reflective passivation layer
5. Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes
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1. Improved external quantum efficiency of deep UV LEDs with an ultra-thin AlGaN last quantum barrier by controlling the desorption-kinetics process;Applied Physics Express;2023-11-01
2. Enhanced hole injection in Ga-polar 290 nm AlGaN-based DUV LEDs with a p-n junction hole accelerator;Optical Materials Express;2023-10-30
3. Last-Quantum-Barrier-Free AlGaN Deep Ultraviolet LEDs With Boosted Efficiency;IEEE Transactions on Electron Devices;2023-10
4. Improving the hole injection efficiency in AlGaN DUV LEDs by minimizing the band offset at the p-EBL/hole supplier interface;Optical Materials Express;2023-08-01
5. Simultaneously improved hole injection and current uniformity in 293 nm AlGaN-based deep ultraviolet light-emitting diodes;Optical Materials Express;2023-07-27
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